Display device and method for manufacturing the same

ABSTRACT

A conductive layer to be a gate electrode, an insulating layer to be a gate insulating layer, a semiconductor layer, and an insulating layer to be a channel protective layer, which are each included in a transistor, are successively formed without exposure to the air. A gate electrode (including another electrode or a wiring which is formed in the same layer) and an island-like semiconductor layer are formed through one photolithography step. A display device is manufactured through four photolithography steps including the photolithography step, a photolithography step of forming a contact hole, a photolithography step of forming a source electrode and a drain electrode (including another electrode or a wiring which is formed in the same layer), and a photolithography step of forming a pixel electrode (including another electrode or a wiring which are formed in the same layer).

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device and a method formanufacturing the semiconductor device, and a display device and amethod for manufacturing method the display device.

In this specification, a semiconductor device means all types of deviceswhich can function by utilizing semiconductor characteristics, and asemiconductor circuit, a memory device, an imaging device, a displaydevice, an electro-optical device, an electronic appliance, and the likeare all semiconductor devices.

2. Description of the Related Art

In recent years, transistors that are formed using a semiconductor thinfilm having a thickness of several nanometers to several hundreds ofnanometers over a substrate having an insulating surface such as a glasssubstrate have been attracting attentions. Transistors are widely usedfor electronic devices such as integrated circuits (ICs) andelectro-optical devices. In particular, transistors are urgentlydeveloped as switching elements of display devices typified by liquidcrystal display devices and the like. In an active matrix liquid crystaldisplay device, a voltage is applied between a pixel electrode connectedto a selected switching element and an opposite electrode correspondingto the pixel electrode, and thus, a liquid crystal layer disposedbetween the pixel electrode and the opposite electrode is modulatedoptically. The optical modulation can be recognized as a display patternby an observer. An active matrix liquid crystal display device heremeans a liquid crystal display device which employs a method in which adisplay pattern is formed on a screen by driving pixel electrodesarranged in matrix using switching elements.

The range of uses of such an active matrix liquid crystal display deviceis expanding, and demands for larger screen size, higher definition, andhigher aperture ratio are increasing. In addition, it is demanded thatthe active matrix liquid crystal display device have high reliabilityand that a production method of the active matrix liquid crystal displaydevice offer high yield and reduce production cost. Simplification of aprocess is one way for increasing productivity and reducingmanufacturing cost.

In active matrix liquid crystal display devices, transistors are mainlyused as switching elements. In manufacturing transistors, reduction inthe number of photolithography steps or simplification of thephotolithography step is important for simplification of the wholeprocess. For example, when one photolithography step is added, thefollowing steps are further needed: resist application, prebaking, lightexposure, development, post-baking, and the like and, moreover, stepsbefore and after the aforementioned steps, such as film formation,etching, resist removal, cleaning, and drying. The number of steps issignificantly increased only by adding one photolithography step in themanufacturing process. Therefore, many techniques for reducing thenumber of photolithography steps or simplifying the photolithographystep in a manufacturing process have been developed.

Transistors are broadly classified into top-gate transistors, in which achannel formation region is provided below a gate electrode, andbottom-gate transistors, in which a channel formation region is providedabove a gate electrode. These transistors are generally manufacturedusing at least five photomasks.

Many conventional techniques for simplifying the photolithography stepuse a complicated technique such as backside light exposure (e.g.,Patent Document 1), resist reflow, or a lift-off method, which requiresa special apparatus in many cases. Using such complicated techniques maycause various problems, thereby leading to reduction in yield. Moreover,electric characteristics of transistors are often deteriorated.

REFERENCE

-   [Patent Document 1] Japanese Published Patent Application No.    H05-203987

SUMMARY OF THE INVENTION

An object of one embodiment of the present invention is to reduce thenumber of photolithography steps used for manufacturing a transistor toless than the conventional one.

Another object of one embodiment of the present invention is to reducethe number of photomasks used for manufacturing a display deviceincluding a transistor to less than the conventional one.

Another object of one embodiment of the present invention is to providea transistor with high productivity.

Another object of one embodiment of the present invention is to providea display device with high productivity.

Another object of one embodiment of the present invention is to providea display device with low power consumption.

Another object of one embodiment of the present invention is to providea display device with high reliability.

A step of forming a gate electrode (including another electrode or awiring which is formed in the same layer) and a step of forming anisland-like semiconductor layer are performed through onephotolithography step, whereby a semiconductor device can bemanufactured with the number of photomasks and the number ofphotolithography steps reduced to less than the conventional one.

A conductive layer to be a gate electrode, an insulating layer to be agate insulating layer, a semiconductor layer, and an insulating layer tobe a channel protective layer, which are each included in a transistor,are successively formed without exposure to the air, whereby each oflayers and interfaces thereof are prevented from being contaminated andthus the characteristics and the reliability of a semiconductor devicecan be improved.

A semiconductor device is manufactured through four photolithographysteps including a photolithography step which serves as both a step offorming a gate electrode (including another electrode or a wiring whichis formed in the same layer) and a step of forming an island-likesemiconductor layer, a step of forming a contact hole, a step of forminga source electrode and a drain electrode (including another electrode ora wiring which is formed in the same layer), and a step of forming apixel electrode (including another electrode or a wiring which is formedin the same layer).

A conductive layer to be a gate electrode, an insulating layer to be agate insulating layer, a semiconductor layer, and an insulating layer tobe a channel protective layer, which are each included in a transistor,are successively formed, and a resist mask having a thick region and athin region, which is exposed to light and developed using a multi-tonemask as a first photomask, is formed.

The conductive layer to be a gate electrode, the insulating layer to bea gate insulating layer, the semiconductor layer, and the insulatinglayer to be a channel protective layer are etched using the resist maskas a mask. Subsequently, the thin region of the resist mask is removedso that a remaining conductive layer to be a gate electrode, a remaininginsulating layer to be a gate insulating layer, a remainingsemiconductor layer, and a remaining insulating layer to be a channelprotective layer are exposed. Further, the insulating layer to be a gateinsulating layer, the semiconductor layer, and the insulating layer tobe a channel protective layer are etched using the remaining resist maskas a mask so that a gate electrode (including another electrode or awiring which is formed in the same layer), an island-like gateinsulating layer, an island-like semiconductor layer, and island-likechannel protective layer are formed. After that, the resist mask isremoved.

In such a manner, the gate electrode (including another electrode or awiring which is formed in the same layer) and the island-likesemiconductor layer can be formed through one photolithography step. Atthis time, the side surfaces of the island-like gate insulating layer,the island-like semiconductor layer, and the island-like channelprotective layer on each side are substantially aligned with oneanother, and each layer has a substantially similar shape when seen fromthe above.

In this specification, “layers in which the side surfaces on one sideare substantially aligned with one another” means that outlines of theside surfaces of the layers on one side are substantially aligned asseen from the above, including the case where upper end portions andlower end portions of the layers are aligned, the case where the sidesurface of one layer is recessed with respect to the side surface ofanother layer, and the case where tapered shapes of the side surfaces onone side of the layers are different from one another.

Further, the end portions of the gate electrode are projected from theend portions of the island-like gate insulating layer, the island-likesemiconductor layer, and the island-like channel protective layer,whereby a step is suppressed and coverage with an insulating layer or aconductive layer which will be formed later can be improved.

According to one embodiment of the present invention, a display deviceincludes a gate electrode, a gate insulating layer, a semiconductorlayer, a channel protective layer, a source electrode, and a drainelectrode. In the display device, the source electrode and the drainelectrode are electrically connected to the semiconductor layer throughcontact holes provided in the channel protective layer; the drainelectrode is electrically connected to a pixel electrode; and sidesurfaces of the gate insulating layer, the semiconductor layer, and thechannel protective layer on one side are substantially aligned with oneanother.

According to another embodiment of the present invention, a displaydevice includes a transistor and a capacitor. In the display device, thetransistor includes a gate insulating layer formed over a gateelectrode; a semiconductor layer formed over the gate insulating layer;a first channel protective layer formed over the semiconductor layer; asecond channel protective layer formed over the first channel protectivelayer; and a source electrode and a drain electrode formed over thesecond channel protective layer and electrically connected to thesemiconductor layer through contact holes provided in the first channelprotective layer and the second channel protective layer. The drainelectrode is electrically connected to a pixel electrode; and sidesurfaces of the gate insulating layer, the semiconductor layer, and thefirst channel protective layer of the transistor on one side aresubstantially aligned with one another; and in the capacitor, the secondchannel protective layer is interposed between a capacitor wiring andthe drain electrode.

According to another embodiment of the present invention, in a methodfor manufacturing a display device, a conductive layer, a firstinsulating layer, a semiconductor layer, and a second insulating layerare formed; a gate electrode and an island-like semiconductor layer areformed by selective removal of the conductive layer, the firstinsulating layer, the semiconductor layer, and the second insulatinglayer through a first photolithography step; a portion of theisland-like semiconductor layer is exposed by selective removal of aportion of the second insulating layer through a second photolithographystep; a source electrode and a drain electrode are formed through athird photolithography step; and a pixel electrode is formed through afourth photolithography step.

According to another embodiment of the present invention, in a methodfor manufacturing a display device, a conductive layer, a firstinsulating layer, a semiconductor layer, and a second insulating layerare formed; a gate electrode, a capacitor wiring, and an island-likesemiconductor layer are formed by selective removal of the conductivelayer, the first insulating layer, the semiconductor layer, and thesecond insulating layer through a first photolithography step; a thirdinsulating layer covering the gate electrode, the capacitor wiring, andthe island-like semiconductor layer are formed; a portion of theisland-like semiconductor layer is exposed by selective removal of aportion of the second insulating layer and the third insulating layerthrough a second photolithography step; a source electrode and a drainelectrode are formed through a third photolithography step and a portionof the drain electrode overlaps with the third insulating layer and thecapacitor wiring; and a pixel electrode is formed through a fourthphotolithography step.

The removal of the conductive layer, the first insulating layer, thesemiconductor layer, the second insulating layer, and the thirdinsulating layer can be performed by dry etching, wet etching, or acombination of dry etching and wet etching.

When the gate electrodes, the source electrodes, the drain electrodes,or a wiring connected to such electrodes are formed of a materialcontaining copper or aluminum, wiring resistance can be reduced and thussignal delay can be prevented.

For the semiconductor layer, a single crystal semiconductor, apolycrystalline semiconductor, a microcrystalline semiconductor, anamorphous semiconductor, or the like can be used. Examples of asemiconductor material include silicon, germanium, silicon germanium,silicon carbide, and gallium arsenide.

Alternatively, an oxide semiconductor can be used for the semiconductorlayer. The electron affinity of an oxide semiconductor is higher thanthat of silicon or germanium, and an ohmic contact between thesemiconductor layer, and the source electrode or the drain electrode canbe obtained without an ohmic contact layer therebetween. With the use ofan oxide semiconductor for the semiconductor layer, a manufacturingprocess of a semiconductor device can be simplified; thus, theproductivity of the semiconductor device can be improved.

Note that an oxide semiconductor which is purified (purified OS) byreduction of an impurity such as moisture or hydrogen which serves as anelectron donor (donor) can be made to be an i-type (intrinsic) oxidesemiconductor or an oxide semiconductor extremely close to an i-typesemiconductor (a substantially i-type oxide semiconductor) by thensupplying oxygen to the oxide semiconductor to reduce oxygen deficiencyin the oxide semiconductor. Accordingly, a transistor including thei-type or substantially i-type oxide semiconductor in a semiconductorlayer where a channel is formed has characteristics of very smalloff-state current. Specifically, the concentration of hydrogen in thepurified oxide semiconductor which is measured by secondary ion massspectrometry (SIMS) is lower than or equal to 5×10¹⁹/cm³, preferablylower than or equal to 5×10¹⁸/cm³, further preferably lower than orequal to 5×10¹⁷/cm³, still further preferably lower than or equal to1×10¹⁶/cm³. In addition, the carrier density of the oxide semiconductorlayer, which is measured by Hall effect measurement, is lower than1×10¹⁴/cm³, preferably lower than 1×10¹²/cm³, further preferably lowerthan 1×10¹¹/cm³. Furthermore, the band gap of the oxide semiconductor is2 eV or more, preferably 2.5 eV or more, further preferably 3 eV ormore. When the oxide semiconductor which is purified by reduction of animpurity such as moisture or hydrogen and in which oxygen deficiency isreduced is used for the semiconductor layer, the off-state current ofthe transistor can be reduced.

The analysis of the hydrogen concentration in the oxide semiconductor bySIMS is described here. It is known to be difficult to obtain accuratedata in the proximity of a surface of a sample or in the proximity of aninterface between stacked films formed of different materials by theSIMS analysis in principle. Thus, in the case where the distribution ofthe hydrogen concentration in the thickness direction of a film isanalyzed by SIMS, the average value of the hydrogen concentration in aregion of the film where almost the same value can be obtained withoutsignificant variation is employed as the hydrogen concentration.Further, in the case where the thickness of the film is small, a regionwhere almost the same value can be obtained cannot be found in somecases due to the influence of the hydrogen concentration of an adjacentfilm. In this case, the maximum value or the minimum value of thehydrogen concentration of a region where the film is provided isemployed as the hydrogen concentration of the film. Furthermore, in thecase where a maximum value peak and a minimum value valley do not existin the region where the film is provided, the value of the inflectionpoint is employed as the hydrogen concentration.

According to one embodiment of the present invention, the number ofmanufacturing steps of a display device can be reduced; accordingly, atransistor can be provided at low cost with high productivity.

According to one embodiment of the present invention, the number ofmanufacturing steps of a display device can be reduced; accordingly, adisplay device can be provided at low cost with high productivity.

According to one embodiment of the present invention, a display devicewith low power consumption can be provided.

According to one embodiment of the present invention, a display devicewith high reliability can be provided.

One embodiment of the present invention solves at least one of the aboveproblems.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1C are a top view and cross-sectional views illustrating oneembodiment of the present invention.

FIGS. 2A and 2B are a top view and a cross-sectional view, respectively,illustrating one embodiment of the present invention.

FIGS. 3A and 3B are a top view and a cross-sectional view, respectively,illustrating one embodiment of the present invention.

FIGS. 4A and 4B are circuit diagrams illustrating one embodiment of thepresent invention.

FIGS. 5A1 and 5B1 and FIGS. 5A2 and 5B2 are top views andcross-sectional views, respectively, illustrating one embodiment of thepresent invention.

FIGS. 6A and 6B are cross-sectional views illustrating one embodiment ofthe present invention.

FIGS. 7A and 7B are cross-sectional views illustrating one embodiment ofthe present invention.

FIGS. 8A and 8B are cross-sectional views illustrating one embodiment ofthe present invention.

FIGS. 9A to 9C are cross-sectional views illustrating one embodiment ofthe present invention.

FIGS. 10A to 10C are cross-sectional views illustrating one embodimentof the present invention.

FIGS. 11A and 11B are a top view and a cross-sectional view,respectively, illustrating one embodiment of the present invention.

FIGS. 12A to 12F are each a diagram describing one example of anelectronic appliance.

FIGS. 13A to 13D are diagrams describing examples of a multi-tone mask.

DETAILED DESCRIPTION OF THE INVENTION

Embodiments will be described in detail with reference to the drawings.Note that the present invention is not limited to the followingdescription, and it will be readily appreciated by those skilled in theart that the mode and details can be changed in various different wayswithout departing from the spirit and the scope of the presentinvention. Therefore, the present invention should not be construed asbeing limited to the following description of the embodiments. Note thatin the structures of the present invention which are described below,the same reference numerals are commonly used to denote the samecomponents or components having similar functions among differentdrawings, and description of such components is not repeated.

In addition, in this specification and the like, ordinal numbers such as“first”, “second”, and “third” are used in order to avoid confusionamong components, and the terms do not limit the components numerically.

In addition, the position, size, range, or the like of each structureillustrated in drawings and the like is not accurately represented insome cases for easy understanding. Therefore, the disclosed invention isnot necessarily limited to the position, size, range, or the like asdisclosed in the drawings and the like.

A transistor is one kind of semiconductor elements and can amplifycurrent or voltage and perform a switching operation for controllingconduction or non-conduction, for example. A transistor in thisspecification includes an insulated-gate field effect transistor (IGFET)and a thin film transistor (TFT).

Functions of a “source” and a “drain” of a transistor might interchangewhen a transistor of opposite polarity is used or the direction ofcurrent flow is changed in circuit operation, for example. Therefore,the terms “source” and “drain” can be used to denote the drain and thesource, respectively, in this specification.

In addition, in this specification and the like, the term such as“electrode” or “wiring” does not limit a function of a component. Forexample, an “electrode” is sometimes used as part of a “wiring”, andvice versa. Further, the term “electrode” or “wiring” can also mean acombination of a plurality of “electrodes” and “wirings” formed in anintegrated manner.

Embodiment 1

In this embodiment, examples of a pixel of a display device formedthrough a process in which the number of photomasks and the number ofphotolithography steps are reduced, and an example of a method forforming the pixel will be described with reference to FIGS. 1A to 1C,FIGS. 2A and 2B, FIGS. 3A and 3B, FIGS. 4A and 4B, FIGS. 5A1, 5A2, 5B1,and 5B2, FIGS. 6A and 6B, FIGS. 7A and 7B, FIGS. 8A and 8B, and FIGS. 9Ato 9C.

FIG. 4A illustrates an example of the configuration of a semiconductordevice 100 that is used in a display device. The semiconductor device100 includes a pixel region 102, a terminal portion 103 including mterminals 105 (105-1 to 105-m and m is an integer of greater than orequal to 1) and a terminal 107, and a terminal portion 104 including nterminals 106 (106-1 to 106-n and n is an integer of greater than orequal to 1) over a substrate 101. Further, the semiconductor device 100includes m wirings 212 electrically connected to the terminal portion103, n wirings 216 electrically connected to the terminal portion 104,and a wiring 203. The pixel region 102 includes a plurality of pixels110 arranged in matrix of m rows (in the longitudinal direction)×ncolumns (in the transverse direction). The pixel 110 (i, j) (i is aninteger greater than or equal to 1 and less than or equal to m, and j isan integer greater than or equal to 1 and less than or equal to n) inthe i-th row and the j-th column is electrically connected to a wiring212-i and a wiring 216-j. In addition, each pixel is connected to thewiring 203 functioning as a capacitor electrode or a capacitor wiring,and the wiring 203 is electrically connected to the terminal 107. Thewiring 212-i is electrically connected to a terminal 105-i, and thewiring 216-j is electrically connected to a terminal 106-j.

The terminal portion 103 and the terminal portion 104 are external inputterminals and are connected to external control circuits with flexibleprinted circuits (FPC) or the like. Signals supplied from the externalcontrol circuits are input to the semiconductor device 100 through theterminal portion 103 and the terminal portion 104. In FIG. 4A, suchterminal portions 103 are provided on the right and left of the pixelregion 102, so that signals are input from two directions. Further, suchterminal portions 104 are provided above and below the pixel region 102,so that signals are input from two directions. By inputting signals fromtwo directions, signal supply capability is increased and high-speedoperation of the semiconductor device 100 is facilitated. In addition,influences of signal delay due to an increase in size of thesemiconductor device 100 or an increase in wiring resistance accompaniedby an increase in definition can be reduced. Moreover, the semiconductordevice 100 can have redundancy, so that the reliability of thesemiconductor device 100 can be improved. Although two terminal portions103 and two terminal portions 104 are provided in FIG. 4A, a structurein which one terminal portion 103 and one terminal portion 104 areprovided may also be employed.

FIG. 4B illustrates a circuit configuration of the pixel 110. The pixel110 includes a transistor 111, a liquid crystal element 112, and acapacitor 113. A gate electrode of the transistor 111 is electricallyconnected to the wiring 212-i, and one of a source electrode and a drainelectrode of the transistor 111 is electrically connected to the wiring216-j. The other of the source electrode and the drain electrode of thetransistor 111 is electrically connected to one electrode of the liquidcrystal element 112 and one electrode of the capacitor 113. The otherelectrode of the liquid crystal element 112 is electrically connected toan electrode 114. The potential of the electrode 114 may be a fixedpotential such as 0 V, GND, or a common potential. The other electrodeof the capacitor 113 is electrically connected to the wiring 203.

The transistor 111 has a function of selecting whether an image signalsupplied from the wiring 216-j is input to the liquid crystal element112. After a signal that turns on the transistor 111 is supplied to thewiring 212-i, an image signal is supplied to the liquid crystal element112 from the wiring 216-j through the transistor 111. The transmittanceof light is controlled in accordance with the image signal (potential)supplied to the liquid crystal element 112. The capacitor 113 has afunction as a storage capacitor (also referred to as a Cs capacitor) forholding a potential supplied to the liquid crystal element 112. Thecapacitor 113 need not necessarily be provided; however, in the case ofproviding the capacitor 113, variation in the potential applied to theliquid crystal element 112, which is caused by a current flowing betweenthe source electrode and the drain electrode in an off state of thetransistor 111 (off-state current), can be suppressed.

For a semiconductor layer where a channel of the transistor 111 isformed, a single crystal semiconductor, a polycrystalline semiconductor,a microcrystalline semiconductor, an amorphous semiconductor, or thelike can be used. Examples of a semiconductor material include silicon,germanium, silicon germanium, silicon carbide, and gallium arsenide.Alternatively, an oxide semiconductor can be used for the semiconductorlayer where a channel of the transistor 111 is formed.

In general, the electron affinity of silicon, germanium, or the like islower than the work function of metal. Therefore, in the case where itis necessary to obtain an ohmic contact between the semiconductor layerincluding silicon or germanium, and the source electrode or the drainelectrode, it is necessary to provide an ohmic contact layertherebetween.

However, since the electron affinity of an oxide semiconductor is higherthan that of silicon or germanium, an ohmic contact between thesemiconductor layer including an oxide semiconductor, and the sourceelectrode or the drain electrode can be obtained without an ohmiccontact layer therebetween. For example, since the electron affinity ofan In—Ga—Zn—O-based oxide semiconductor is about 4.3 eV, an ohmiccontact between the semiconductor layer, and the source electrode or thedrain electrode can be obtained without an ohmic contact layer in such amanner that an In—Ga—Zn—O-based oxide semiconductor is used for thesemiconductor layer, and titanium which has a work function of about 4.1eV, titanium nitride which has a work function of about 4.0 eV, or thelike is used for the source electrode or the drain electrode connectedto the semiconductor layer. With the use of an oxide semiconductor forthe semiconductor layer, a manufacturing process of a semiconductordevice can be simplified; thus, the productivity of the semiconductordevice can be improved.

Next, an example of the configuration of the pixel 110 illustrated inFIGS. 4A and 4B will be described with reference to FIGS. 1A to 1C,FIGS. 2A and 2B, and FIGS. 3A and 3B. FIG. 1A is a top view illustratingthe planar structure of the pixel 110, and FIG. 1B is a cross-sectionalview illustrating the stacked-layer structure of a portion taken alongthe chain line A1-A2 in FIG. 1A. FIG. 1C is a cross-sectional viewillustrating the stacked-layer structure of a portion taken along thechain line B1-B2 in FIG. 1A.

In the transistor 111 in this embodiment, a drain electrode 206 b issurrounded by a source electrode 206 a that is U-shaped (or C-shaped,square-bracket-like shaped, or horseshoe-shaped). With such a shape, anenough channel width can be ensured even when the area of the transistor111 is small, and accordingly, the amount of current flowing at the timeof conduction of the transistor (also referred to as the on-statecurrent) can be increased.

If parasitic capacitance generated between a gate electrode 202 and thedrain electrode 206 b electrically connected to a pixel electrode 210 islarge, the transistor is easily influenced by feedthrough, which maycause degradation in display quality because the potential supplied tothe liquid crystal element 112 cannot be held accurately. With thestructure in which the source electrode 206 a is U-shaped and surroundsthe drain electrode 206 b as described in this embodiment, an enoughchannel width can be ensured and parasitic capacitance generated betweenthe drain electrode 206 b and the gate electrode 202 can be reduced.Therefore, the display quality of a display device can be improved.

Further, when one of the source electrode 206 a and the drain electrode206 b or both are provided so that a channel formation region of thetransistor 111 is covered as much as possible, one of the sourceelectrode 206 a and the drain electrode 206 b or both can function as alight-blocking layer. Deterioration in characteristics of the transistordue to light irradiation can be prevented by providing thelight-blocking layer so as to overlap with the channel formation regionof the semiconductor layer.

The wiring 203 functions as a capacitor electrode or a capacitor wiring.In this embodiment, the capacitor 113 is formed using the overlappingwiring 203, insulating layer 215, and drain electrode 206 b.

The cross section A1-A2 shows the stacked-layer structure of thetransistor 111 and the capacitor 113. Note that the transistor 111 inthis embodiment is a bottom-gate transistor. Further, the cross sectionB1-B2 shows the stacked-layer structure of an intersection of the wiring216-j and the wiring 212-i.

In the cross section A1-A2 in FIG. 1B, an insulating layer 201 is formedover a substrate 200, and the gate electrode 202 and the wiring 203 areformed over the insulating layer 201. The insulating layer 201 functionsas a base layer. Over the gate electrode 202, an insulating layer 204functioning as a gate insulating layer, a semiconductor layer 205, andan insulating layer 214 and the insulating layer 215 each functioning asa channel protective layer are provided. In addition, the insulatinglayer 215 is formed so as to cover the side surfaces of thesemiconductor layer 205 and also has a function of preventing entry ofan impurity from the side surfaces of the semiconductor layer 205.

Further, the source electrode 206 a and the drain electrode 206 b areformed over the insulating layer 215, and are electrically connected tothe semiconductor layer 205 through contact holes 208 formed in theinsulating layer 214 and the insulating layer 215. Furthermore, thepixel electrode 210 is formed over the insulating layer 215 and iselectrically connected to the drain electrode 206 b.

A portion in which the wiring 203 and the drain electrode 206 b overlapwith each other with the insulating layer 215 interposed therebetweenfunctions as the capacitor 113. The insulating layer 215 functions as adielectric layer of the capacitor 113.

In the cross section B1-B2 in FIG. 1C, the insulating layer 201 isformed over the substrate 200, and the wiring 212-i is formed over theinsulating layer 201. The insulating layer 204 and the semiconductorlayer 205 are formed over the wiring 212-i. The insulating layer 214 andthe insulating layer 215 are formed over the semiconductor layer 205,and the wiring 216-j is formed over the insulating layer 215.

By forming the insulating layers and the semiconductor layer describedabove between the wiring 216-j and the wiring 212-i, the distance in thefilm thickness direction between both the wirings can be increased;thus, parasitic capacitance in the intersection of the wiring 216-j andthe wiring 212-i can be reduced. By reducing the parasitic capacitancein the intersection, delay of a signal supplied to the wiring 216-j andthe wiring 212-i or distortion of the waveform can be reduced; thus, adisplay device with high display quality can be achieved.

Next, a pixel 120 which can be replaced with the pixel 110 illustratedin FIGS. 1A to 1C and has a pixel configuration different from that ofthe pixel 110 will be described with reference to FIGS. 2A and 2B. FIG.2A is a top view illustrating the planar structure of the pixel 120. Across section C1-C2 illustrated in FIG. 2B corresponds to the crosssection in a portion taken along the chain line C1-C2 in FIG. 2A. Thepixel 120 illustrated in FIGS. 2A and 2B is different from the pixel 110in the structure of the capacitor.

The wiring 203, the insulating layer 215, and the pixel electrode 210are overlapped with one another to form a capacitor 123 included in thepixel 120. With the use of the pixel electrode for one electrode of thecapacitor, the aperture ratio of the pixel 120 can be improved and thedisplay quality of a display device can be improved because highdefinition can be easily achieved. Further, the light from a backlightcan be used efficiently; thus, the power consumption of a display devicecan be reduced.

Subsequently, a pixel 130 which can be replaced with the pixel 110illustrated in FIGS. 1A to 1C and the pixel 120 illustrated in FIGS. 2Aand 2B and has a pixel configuration different from that of the pixel110 and the pixel 120 will be described with reference to FIGS. 3A and3B. FIG. 3A is a top view illustrating the planar structure of the pixel130. A cross section D1-D2 illustrated in FIG. 3B corresponds to thecross section in a portion taken along the chain line D1-D2 in FIG. 3A.The pixel 130 illustrated in FIGS. 3A and 3B is different from the pixel110 and the pixel 120 in the structure of the capacitor.

In the pixel 130, the wiring 203 is omitted, and a wiring 212-i+1included in a pixel adjacent to the pixel 130, the insulating layer 215,and the pixel electrode 210 are overlapped with one another to form acapacitor 133. By omitting the wiring 203, the aperture ratio of thepixel 130 can be improved and the display quality of a display devicecan be improved because high definition can be easily achieved. Further,the light from a backlight can be used efficiently; thus, the powerconsumption of a display device can be reduced. Note that since thewiring 203 is omitted in the pixel 130, the terminal 107 of thesemiconductor device 100 can also be omitted.

Next, examples of the structures of the terminal 105 (one of m terminals105) and the terminal 106 (one of n terminals 106) will be describedwith reference to FIGS. 5A1, 5A2, 5B1, and 5B2. Note that the terminal107 can have a structure similar to that of the terminal 105 or theterminal 106. FIGS. 5A1 and 5A2 are a top view and a cross-sectionalview, respectively, of the terminal 105. The chain line J1-J2 in FIG.5A1 corresponds to a cross section J1-J2 in FIG. 5A2. FIGS. 5B1 and 5B2are a top view and a cross-sectional view, respectively, of the terminal106. The chain line K1-K2 in FIG. 5B1 corresponds to a cross sectionK1-K2 in FIG. 5B2. In the cross sections J1-J2 and K1-K2, J2 and K2correspond to end portion sides of the substrate.

In the cross section J1-J2, the insulating layer 201 is formed over thesubstrate 200, and the wiring 212 is formed over the insulating layer201. The insulating layer 215 is formed over the wiring 212. Anelectrode 221 is formed over the insulating layer 215, and the electrode221 is electrically connected to the wiring 212 through a contact hole219 formed in the insulating layer 215. Further, an electrode 222 isformed over the electrode 221.

In the cross section K1-K2, the insulating layer 201 and the insulatinglayer 215 are formed over the substrate 200. The wiring 216 is formedover the insulating layer 215, and an electrode 223 is formed over thewiring 216.

Subsequently, a method for manufacturing the pixel 110 of a displaydevice, which is described with reference to FIGS. 1A to 1C, and amethod for manufacturing the terminal 105 and the terminal 106 which aredescribed with reference to FIGS. 5A1, 5A2, 5B1, and 5B2 will bedescribed with reference to FIGS. 6A and 6B, FIGS. 7A and 7B, FIGS. 8Aand 8B, and FIGS. 9A to 9C. Note that cross sections A1-A2, J1-J2, andK1-K2 in FIGS. 6A and 6B, FIGS. 7A and 7B, FIGS. 8A and 8B, and FIGS. 9Ato 9C are the cross-sectional views of the portions taken along thechain line A1-A2 in FIGS. 1A to 1C and the chain lines J1-J2 and K1-K2in FIGS. 5A1, 5A2, 5B1, and 5B2.

First, the insulating layer 201, a conductive layer 231, an insulatinglayer 232, a semiconductor layer 233, and an insulating layer 234 areformed over the substrate 200. At this time, the insulating layer 201,the conductive layer 231, the insulating layer 232, the semiconductorlayer 233, and the insulating layer 234 are successively formed withoutexposure to the air, whereby each of layers and interfaces thereof areprevented from being contaminated and thus the characteristics and thereliability of the semiconductor device can be improved (see FIG. 6A).

As the substrate 200, as well as a glass substrate or a ceramicsubstrate, a plastic substrate or the like having heat resistance towithstand a process temperature in this manufacturing process can beused. In the case where a substrate does not need a light-transmittingproperty, a metal substrate such as a stainless alloy substrate, whosesurface is provided with an insulating layer, may be used. As the glasssubstrate, for example, an alkali-free glass substrate of bariumborosilicate glass, aluminoborosilicate glass, aluminosilicate glass, orthe like may be used. In addition, a quartz substrate, a sapphiresubstrate, or the like can be used. Note that more practical glass withheat resistance can be obtained when it contains a larger amount ofbarium oxide (BaO) than diboron trioxide (B₂O₃). Therefore, a glasssubstrate containing BaO and B₂O₃ so that the amount of BaO is largerthan that of B₂O₃ is preferably used.

The insulating layer 201 can be formed to have a single-layer structureor a stacked-layer structure using one or more of the followinginsulating layers: an aluminum oxide layer, an aluminum nitride layer,an aluminum oxynitride layer, a silicon oxide layer, a silicon nitridelayer, a silicon nitride oxide layer, and a silicon oxynitride layer.The insulating layer 201 has a function of preventing diffusion ofimpurity elements from the substrate 200. Note that in thisspecification, silicon nitride oxide contains more nitrogen than oxygenand, in the case where measurements are performed using RBS and HFS,preferably contains oxygen, nitrogen, silicon, and hydrogen atconcentrations of greater than or equal to 5 atomic % and less than orequal to 30 atomic %, greater than or equal to 20 atomic % and less thanor equal to 55 atomic %, greater than or equal to 25 atomic % and lessthan or equal to 35 atomic %, and greater than or equal to 10 atomic %and less than or equal to 30 atomic %, respectively. The insulatinglayer 201 can be formed by a sputtering method, a molecular beam epitaxy(MBE) method, a CVD method, a pulse laser deposition method, an atomiclayer deposition (ALD) method, a coating method, a printing method, orthe like as appropriate. Note that the insulating layer 201 is formed toa thickness of greater than or equal to 50 nm and less than or equal to300 nm, preferably greater than or equal to 100 nm and less than orequal to 200 nm.

When a halogen element such as chlorine or fluorine is contained in theinsulating layer 201 functioning as a base layer, a function ofpreventing diffusion of impurity elements from the substrate 200 can befurther improved. The peak of the concentration of a halogen elementcontained in the insulating layer 201 may be higher than or equal to1×10¹⁵/cm³ and lower than or equal to 1×10²⁰/cm³ when measured bysecondary ion mass spectrometry (SIMS).

Next, over the insulating layer 201, the conductive layer 231 is formedto a thickness of greater than or equal to 100 nm and less than or equalto 500 nm, preferably greater than or equal to 200 nm and less than orequal to 300 nm, by a sputtering method, a vacuum evaporation method, aplating method, or the like.

The conductive layer 231 can be formed to have a single-layer structureor a stacked-layer structure using a metal material such as molybdenum(Mo), titanium (Ti), tungsten (W), tantalum (Ta), aluminum (Al), copper(Cu), chromium (Cr), neodymium (Nd), scandium (Sc), or magnesium (Mg),or a material containing any of these elements as its main component.For example, the conductive layer 231 may be a stack of a Cu—Mg—Alalloy, and Cu or Al. By providing a Cu—Mg—Al alloy material in contactwith the insulating layer 201, adhesion between the conductive layer 231and the insulating layer 201 can be improved.

The conductive layer 231 is formed into an electrode or a wiring througha subsequent photolithography step; therefore, it is preferable to useAl or Cu which is a low-resistance material. When Al or Cu is used,delay of a signal or distortion of the waveform is reduced, so that adisplay device with high display quality can be obtained. Note that Alhas low heat resistance; therefore, defects due to a hillock, a whisker,or migration tend to be caused. In order to prevent migration of Al, itis preferable to employ a stacked-layer structure of Al and a metalmaterial having a higher melting point than Al, such as Mo, Ti, or W, ora material containing any of these metal materials as its maincomponent. Alternatively, as long as the conductive layer 231 is notformed using an insulator, an oxide or a nitride of the above materialsmay be stacked. In the case where a material containing Al is used forthe conductive layer 231, the maximum process temperature in subsequentsteps is preferably lower than or equal to 380° C., further preferablylower than or equal to 350° C.

Also when Cu is used for the conductive layer 231, in order to prevent adefect due to migration and diffusion of Cu elements, it is preferableto employ a stacked-layer structure of Cu and a metal material having ahigher melting point than Cu, such as Mo, Ti, or W, or a materialcontaining any of these metal materials as its main component.Alternatively, as long as the conductive layer 231 is not formed usingan insulator, an oxide or a nitride of the above materials may bestacked. For example, the conductive layer 231 may be a stack oftitanium nitride and Cu. In the case where a material containing Cu isused for the conductive layer 231, the maximum process temperature insubsequent steps is preferably lower than or equal to 450° C.

In this embodiment, as the conductive layer 231, a 5-nm-thick titaniumnitride layer is formed over the insulating layer 201 and a 250-nm-thickCu layer is formed over the titanium nitride layer.

Next, the insulating layer 232 functioning as a gate insulating layer isformed over the conductive layer 231. The insulating layer 232 can beformed using silicon oxide, silicon nitride, silicon oxynitride, siliconnitride oxide, aluminum oxide, aluminum nitride, aluminum oxynitride,aluminum nitride oxide, tantalum oxide, yttrium oxide, lanthanum oxide,hafnium oxide, hafnium silicate (HfSi_(x)O_(y) (x>0, y>0)), or the likeby a method similar to that for forming the insulating layer 201. Theinsulating layer 232 is not limited to a single layer, and a stack ofdifferent layers may be used. For example, the insulating layer 232 maybe formed in the following manner: a silicon nitride (SiN_(y) (y>0))layer is formed by a plasma CVD method as an insulating layer A and asilicon oxide (SiO_(x) (x>0)) layer is stacked over the insulating layerA as an insulating layer B.

Other than a sputtering method, a plasma CVD method, and the like, theinsulating layer 232 can be formed by a film formation method such as ahigh-density plasma CVD method using microwaves (e.g., a frequency of2.45 GHz).

In this embodiment, a stack of a silicon nitride layer and a siliconoxide layer is used as the insulating layer 232. Specifically, a50-nm-thick silicon nitride layer is formed over the conductive layer231, and a 100-nm-thick silicon oxide layer is formed over the siliconnitride layer.

In the case where an oxide semiconductor is used for the semiconductorlayer subsequently formed, the insulating layer 232 may be formed usingan insulating material containing the same kind of component as theoxide semiconductor. In the case where layers of different materials toform the insulating layer 232 are stacked, a layer in contact with theoxide semiconductor may be formed using an insulating materialcontaining the same kind of component as the oxide semiconductor. Thisis because such a material is compatible with the oxide semiconductor,and therefore, the use of such a material for the insulating layer 232enables a state of the interface between the insulating layer 232 andthe oxide semiconductor to be kept well. Here, “the same kind ofcomponent as the oxide semiconductor” means one or more elementsselected from constituent elements of the oxide semiconductor. Forexample, in the case where the oxide semiconductor is formed using anIn—Ga—Zn-based oxide semiconductor material, gallium oxide and the likeare given as an insulating material containing the same kind ofcomponent as the oxide semiconductor.

In the case where a stacked-layer structure is employed for theinsulating layer 232, the insulating layer 232 may have a stacked-layerstructure of a film formed using an insulating material containing thesame kind of component as the oxide semiconductor and a film formedusing a material different from that of the film.

Next, the semiconductor layer 233 is formed over the insulating layer232. Here, an example of using an oxide semiconductor for thesemiconductor layer 233 is will be described. The oxide semiconductorcan be formed by a sputtering method, an evaporation method, a PCVDmethod, a PLD method, an ALD method, an MBE method, or the like.

The oxide semiconductor is formed preferably by a sputtering methodusing an oxygen gas as a sputtering gas. At this time, the substrateheating temperature is higher than or equal to 100° C. and lower than orequal to 600° C., preferably higher than or equal to 150° C. and lowerthan or equal to 550° C., further preferably higher than or equal to200° C. and lower than or equal to 500° C. The thickness of the oxidesemiconductor is greater than or equal to 1 nm and less than or equal to40 nm, preferably greater than or equal to 3 nm and less than or equalto 20 nm. As the substrate heating temperature at the time of filmformation is higher, the impurity concentration in the obtained oxidesemiconductor is lower.

In the case where the oxide semiconductor is used for the channelformation region of the transistor, as the oxide semiconductor isthinner, a short-channel effect of the transistor is reduced. However,when the oxide semiconductor is too thin, influence of interfacescattering is enhanced; thus, the field effect mobility might bedecreased in some cases.

As an oxide semiconductor used for the semiconductor layer 233, afour-component metal oxide such as an In—Sn—Ga—Zn-based oxide; athree-component metal oxide such as an In—Ga—Zn-based oxide, anIn—Sn—Zn-based oxide, an In—Al—Zn-based oxide, a Sn—Ga—Zn-based oxide,an Al—Ga—Zn-based oxide, or a Sn—Al—Zn-based oxide; a two-componentmetal oxide such as an In—Zn-based oxide, a Sn—Zn-based oxide, anAl—Zn-based oxide, a Zn—Mg-based oxide, a Sn—Mg-based oxide, anIn—Mg-based oxide, or an In—Ga-based oxide; an In-based oxide; aSn-based oxide; a Zn-based oxide; or the like may be used. Further,silicon oxide may be contained in the above oxide semiconductor.

An oxide semiconductor preferably contains at least indium (In) or zinc(Zn). In particular, In and Zn are preferably contained. In order toobtain an i-type (intrinsic) oxide semiconductor, dehydration ordehydrogenation treatment and supply of oxygen to be performed later areeffective.

Note that in the case where the oxide semiconductor is used for achannel formation region of a transistor, as a stabilizer for reducingthe variation in electric characteristics of the transistor, the oxidesemiconductor preferably contains gallium (Ga) in addition to In and Zn.Tin (Sn) is preferably contained as a stabilizer. In addition, hafnium(Hf) is preferably contained as a stabilizer. Moreover, aluminum (Al) ispreferably contained as a stabilizer.

As another stabilizer, one or plural kinds of lanthanoid such aslanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium(Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy),holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), or lutetium(Lu) may be contained.

As the oxide semiconductor, for example, any of the following can beused: indium oxide; tin oxide; zinc oxide; a two-component metal oxidesuch as an In—Zn-based oxide, a Sn—Zn-based oxide, an Al—Zn-based oxide,a Zn—Mg-based oxide, a Sn—Mg-based oxide, an In—Mg-based oxide, or anIn—Ga-based oxide; a three-component metal oxide such as anIn—Ga—Zn-based oxide (also referred to as “IGZO”), an In—Al—Zn-basedoxide, an In—Sn—Zn-based oxide (also referred to as “ITZO”), aSn—Ga—Zn-based oxide, an Al—Ga—Zn-based oxide, a Sn—Al—Zn-based oxide,an In—Hf—Zn-based oxide, an In—La—Zn-based oxide, an In—Ce—Zn-basedoxide, an In—Pr—Zn-based oxide, an In—Nd—Zn-based oxide, anIn—Sm—Zn-based oxide, an In—Eu—Zn-based oxide, an In—Gd—Zn-based oxide,an In—Tb—Zn-based oxide, an In—Dy—Zn-based oxide, an In—Ho—Zn-basedoxide, an In—Er—Zn-based oxide, an In—Tm—Zn-based oxide, anIn—Yb—Zn-based oxide, or an In—Lu—Zn-based oxide; and a four-componentmetal oxide such as an In—Sn—Ga—Zn-based oxide, an In—Hf—Ga—Zn-basedoxide, an In—Al—Ga—Zn-based oxide, an In—Sn—Al—Zn-based oxide, anIn—Sn—Hf—Zn-based oxide, or an In—Hf—Al—Zn-based oxide.

Note that for example, the In—Ga—Zn-based oxide means an oxidecontaining indium (In), gallium (Ga), and zinc (Zn) and there is noparticular limitation on the stoichiometric proportion. TheIn—Ga—Zn-based oxide may contain an element other than In, Ga, and Zn.

As the oxide semiconductor, a thin film represented by the chemicalformula, InMO₃(ZnO)_(m), (m>0) can be used. Here, M represents one ormore metal elements selected from Sn, Zn, Fe, Ga, Al, Mn, and Co. Stillalternatively, a material represented by In₂SnO₅(ZnO)_(n) (n>0) may beused as the oxide semiconductor.

The oxide semiconductor may be either single crystal ornon-single-crystal. In the latter case, the oxide semiconductor may beeither amorphous or polycrystal. Further, the oxide semiconductor mayhave either an amorphous structure including a portion havingcrystallinity or a non-amorphous structure.

In an oxide semiconductor in an amorphous state, a flat surface can beobtained with relative ease, so that when a transistor is manufacturedwith the use of the oxide semiconductor, interface scattering can bereduced, and relatively high mobility can be obtained with relativeease.

In an oxide semiconductor having crystallinity, defects in the bulk canbe further reduced and when a surface flatness is improved, mobilityhigher than that of an oxide semiconductor layer in an amorphous statecan be obtained. In order to improve the surface flatness, the oxidesemiconductor is preferably formed over a flat surface. Specifically,the oxide semiconductor may be formed over a surface with the averagesurface roughness (Ra) of less than or equal to 1 nm, preferably lessthan or equal to 0.3 nm, further preferably less than or equal to 0.1nm.

In this embodiment, a 30-nm-thick oxide semiconductor is formed as anoxide semiconductor layer by a sputtering method with the use of anIn—Ga—Zn-based oxide target. In addition, the oxide semiconductor layercan be formed by a sputtering method under a rare gas (typically, argon)atmosphere, an oxygen atmosphere, or a mixed atmosphere of a rare gasand oxygen. In the case where a mixed atmosphere of a rare gas andoxygen is used as a sputtering gas, the percentage of the oxygen gas ishigher than or equal to 30 vol. %, preferably higher than or equal to 50vol. %, further preferably higher than or equal to 80 vol. %.

As a target for forming the oxide semiconductor layer using anIn—Ga—Zn-based oxide by a sputtering method, for example, a metal oxidetarget having a composition ratio of In₂O₃:Ga₂O₃:ZnO=1:1:1 [molar ratio]is used to form an In—Ga—Zn—O layer. Without limitation to the materialand the composition of the above target, for example, a metal oxidetarget having a composition ratio of In₂O₃:Ga₂O₃:ZnO=1:1:2 [molarratio], In₂O₃:Ga₂O₃:ZnO=2:2:1 [molar ratio], or In₂O₃:Ga₂O₃:ZnO=1:1:4[molar ratio] may be used. Alternatively, a target having a compositionratio of In₂O₃:Ga₂O₃:ZnO=2:0:1 [molar ratio] can be used. Alternatively,an In—Ga—Zn-based metal oxide target having an atomic ratio ofIn:Ga:Zn=1:1:1, 4:2:3, 3:1:2, 1:1:2, 2:1:3, or 3:1:4 may be used.

In the case where the oxide semiconductor layer is formed using anIn—Sn—Zn-based oxide material by a sputtering method, it is preferableto use an In—Sn—Zn-based metal oxide target having an atomic ratio ofIn:Sn:Zn=1:1:1, 2:1:3, 1:2:2, or 20:45:35.

The relative density of the metal oxide target is higher than or equalto 90% and lower than or equal to 100%, preferably higher than or equalto 95% and lower than or equal to 99.9%. With the use of a metal oxidetarget with a high relative density, the formed oxide semiconductorlayer can be dense.

It is preferable that a high-purity gas from which impurities such ashydrogen, water, a hydroxyl group, or hydride are removed be used as asputtering gas for the formation of the oxide semiconductor layer. Forexample, in the case where argon is used for the sputtering gas, it ispreferable that the purity be 9N, the dew point be −121° C., the contentof H₂O be lower than or equal to 0.1 ppb, and the content of H₂ be lowerthan or equal to 0.5 ppb. In the case where oxygen is used for thesputtering gas, it is preferable that the purity be 8N, the dew point be−112° C., the content of H₂O be lower than or equal to 1 ppb, and thecontent of H₂ be lower than or equal to 1 ppb.

When the oxide semiconductor layer is formed, the substrate is held in afilm formation chamber kept under a reduced pressure, and thetemperature of the substrate temperature is higher than or equal to 100°C. and lower than or equal to 600° C., preferably higher than or equalto 300° C. and lower than or equal to 500° C. Note that in the casewhere Al is used for the conductive layer 231, the substrate temperatureis lower than or equal to 380° C., preferably lower than or equal to350° C. Alternatively, in the case where Cu is used for the conductivelayer 231, the substrate temperature is lower than or equal to 450° C.

By heating the substrate during the film formation, the concentration ofimpurities such as hydrogen, moisture, hydride, or hydroxide in theformed oxide semiconductor layer can be reduced. In addition, damage bysputtering can be reduced. Then, a sputtering gas from which hydrogenand moisture are removed is introduced into the film formation chamberand moisture remaining therein is removed, and the oxide semiconductorlayer is formed with the use of the above target.

In order to remove moisture remaining in the film formation chamber, anentrapment vacuum pump such as a cryopump, an ion pump, or a titaniumsublimation pump is preferably used. As an evacuation unit, a turbomolecular pump provided with a cold trap may be used. In the filmformation chamber which is evacuated with the cryopump, a hydrogen atom,a compound containing a hydrogen atom such as water (H₂O) (furtherpreferably, also a compound containing a carbon atom), and the like areremoved, whereby the impurity concentration in the oxide semiconductorlayer formed in the film formation chamber can be reduced.

An example of the film formation conditions is as follows: the distancebetween the substrate and the target is 100 mm; the pressure is 0.6 Pa,the direct current (DC) power is 0.5 kW; and oxygen (the proportion ofthe oxygen flow rate is 100%) is used as a sputtering gas. Note that apulsed direct-current power source is preferably used, in which casepowder substances (also referred to as particles or dust) that aregenerated in film formation can be reduced and the film thickness can beuniform.

Next, first heat treatment may be performed, if necessary. By the firstheat treatment, excessive hydrogen (including water and a hydroxylgroup) in the oxide semiconductor layer is removed (dehydration ordehydrogenation), the structure of the oxide semiconductor layer isordered, and the impurity concentration in the oxide semiconductor layercan be reduced.

The first heat treatment is preferably performed at a temperature higherthan or equal to 250° C. and lower than or equal to 750° C. or higherthan or equal to 400° C. and lower than the strain point of thesubstrate in a reduced pressure atmosphere, an inert gas atmosphere suchas a nitrogen atmosphere or a rare gas atmosphere, an oxygen gasatmosphere, or an ultra dry air atmosphere (in air whose moisturecontent is lower than or equal to 20 ppm (the dew point: −55° C.),preferably lower than or equal to 1 ppm, further preferably lower thanor equal to 10 ppb in the case where measurement is performed using adew-point meter of a cavity ring-down laser spectroscopy (CRDS) system).Note that in the case where Al is used for a wiring layer formed througha first photolithography step, the heat treatment temperature is lowerthan or equal to 380° C., preferably lower than or equal to 350° C.Alternatively, in the case where Cu is used for the wiring layer formedthrough the first photolithography step, the heat treatment temperatureis lower than or equal to 450° C. In this embodiment, the substrate isintroduced into an electric furnace which is a kind of heat treatmentapparatuses, and heat treatment is performed on the oxide semiconductorlayer at 450° C. in a nitrogen atmosphere for 1 hour.

Note that the heat treatment apparatus is not limited to the electricalfurnace, and may include a device for heating a process object by heatconduction or heat radiation from a heating element such as a resistanceheating element. For example, an RTA (rapid thermal anneal) apparatussuch as a GRTA (gas rapid thermal anneal) apparatus or an LRTA (lamprapid thermal anneal) apparatus can be used. An LRTA apparatus is anapparatus for heating a process object by radiation of light (anelectromagnetic wave) emitted from a lamp such as a halogen lamp, ametal halide lamp, a xenon arc lamp, a carbon arc lamp, a high-pressuresodium lamp, or a high-pressure mercury lamp. A GRTA apparatus is anapparatus for heat treatment using a high-temperature gas. As thehigh-temperature gas, an inert gas which does not react with a processobject by heat treatment, such as nitrogen or a rare gas like argon, isused.

For example, as the first heat treatment, GRTA may be performed asfollows. The substrate is transferred and put in an inert gas heated toa high temperature, is heated for several minutes, and is transferredand taken out of the inert gas heated to the high temperature.

When the first heat treatment is performed in an atmosphere of an inertgas such as nitrogen or a rare gas, oxygen, or ultra-dry air, it ispreferable that the atmosphere do not contain water, hydrogen, or thelike. It is also preferable that the purity of nitrogen, oxygen, or therare gas which is introduced into a heat treatment apparatus be higherthan or equal to 6N (99.9999%), preferably higher than or equal to 7N(99.99999%) (that is, the impurity concentration is lower than or equalto 1 ppm, preferably lower than or equal to 0.1 ppm).

The first heat treatment is preferably performed in such a manner thatafter heat treatment is performed in a reduced pressure atmosphere or aninert atmosphere, the atmosphere is switched to an oxidation atmospherewith the temperature maintained and heat treatment is further performed.When the heat treatment is performed in a reduced pressure atmosphere oran inert atmosphere, the impurity concentration in the oxidesemiconductor layer can be reduced; however, oxygen deficiency is causedat the same time. By the heat treatment in the oxidation atmosphere, thecaused oxygen deficiency can be reduced.

Further, the first heat treatment may be performed anytime after theoxide semiconductor layer is formed.

Next, the insulating layer 234 is formed over the semiconductor layer233. The insulating layer 234 can be formed using a material and amethod similar to those of the insulating layer 201 or the insulatinglayer 232.

In the case where an oxide semiconductor is used for the semiconductorlayer 233, an insulator containing oxygen is preferably used for theinsulating layer 234. Note that in the case where an oxide semiconductoris used for the semiconductor layer 233, a metal oxide containing thesame kind of component as the oxide semiconductor may be formed.

In this embodiment, a 200-nm-thick silicon oxide layer is formed as theinsulating layer 234 by a sputtering method. The substrate temperaturein film formation may be higher than or equal to room temperature andlower than or equal to 300° C. and, in this embodiment, is 100° C. Thesilicon oxide layer can be formed by sputtering in a rare gas (typicallyargon) atmosphere, an oxygen atmosphere, or a mixed atmosphere of a raregas and oxygen. As a target, a silicon oxide or silicon can be used. Forexample, a silicon oxide layer can be formed by sputtering in anatmosphere containing oxygen with the use of silicon for the target.

In order to remove remaining moisture from the film formation chamber atthe time of formation of the insulating layer 234, an entrapment vacuumpump (e.g., a cryopump) is preferably used. When the insulating layer234 is formed in the film formation chamber evacuated using a cryopump,the impurity concentration in the insulating layer 234 can be reduced.In addition, as an evacuation unit for removing moisture remaining inthe chamber used for depositing the insulating layer 234, a turbomolecular pump provided with a cold trap may be used.

It is preferable that a high-purity gas from which impurities such ashydrogen, water, a hydroxyl group, or hydride are removed be used as asputtering gas for the formation of the insulating layer 234.

Then, if necessary, second heat treatment may be performed in a reducedpressure atmosphere, an inert gas atmosphere, an oxygen gas atmosphere,or an ultra-dry air atmosphere (preferably at a temperature higher thanor equal to 200° C. and lower than or equal to 600° C., for example,higher than or equal to 250° C. and lower than or equal to 550° C.).Note that in the case where Al is used for the conductive layer 231, theheat treatment temperature is lower than or equal to 380° C., preferablylower than or equal to 350° C. Alternatively, in the case where Cu isused for the conductive layer 231, the heat treatment temperature islower than or equal to 450° C. For example, the second heat treatmentmay be performed at 450° C. in a nitrogen atmosphere for 1 hour. By thesecond heat treatment, the oxide semiconductor layer is heated in thestate of being in contact with the insulating layer 234, so that oxygencan be supplied from the insulating layer 234 containing oxygen to thesemiconductor layer 233. Note that the first heat treatment serving asthe second heat treatment may be performed after the insulating layer234 is formed. Alternatively, the supply of oxygen to the semiconductorlayer 233 may be performed using an ion implantation method, an iondoping method, or the like.

Next, the first photolithography step is performed. First, a resist mask235 is formed over the insulating layer 234 using a multi-tone mask as afirst photomask (see FIG. 6B).

Here, a multi-tone mask will be described with reference to FIGS. 13A to13D. A multi-tone mask can perform three levels of light exposure toobtain an exposed portion, a half-exposed portion, and an unexposedportion. A multi-tone mask is a mask through which light is transmittedto have a plurality of intensities. One-time light exposure anddevelopment process can form a resist mask with regions of pluralthicknesses (typically, two kinds of thicknesses) to be formed. Thus,the number of light-exposure masks (photomasks) can be reduced by usinga multi-tone mask.

As typical examples of the multi-tone mask, a gray-tone mask 801 aillustrated in FIG. 13A and a half-tone mask 801 b illustrated in FIG.13C are given.

As illustrated in FIG. 13A, the gray-tone mask 801 a includes alight-transmitting substrate 802, and a light-blocking portion 803 and adiffraction grating 804 which are formed on the light-transmittingsubstrate 802. The light transmittance of the light-blocking portion 803is 0%. On the other hand, the diffraction grating 804 has alight-transmitting portion in a slit form, a dot form, a mesh form, orthe like with intervals which are equal to or less than the resolutionlimit of light used for the light exposure; thus, the lighttransmittance can be controlled. The diffraction grating 804 can haveregularly-arranged slits, dots, or meshes, or irregularly-arrangedslits, dots, or meshes.

As the light-transmitting substrate 802, a light-transmitting substratesuch as a quartz substrate can be used. The light-blocking portion 803and the diffraction grating 804 can be formed using a light-blockingmaterial which absorbs light, such as chromium or chromium oxide.

When the gray-tone mask 801 a is irradiated with light for exposure, alight transmittance 805 of the light-blocking portion 803 is 0% and thelight transmittance 805 of a region where neither the light-blockingportion 803 nor the diffraction grating 804 is provided is 100%, asillustrated in FIG. 13B. The light transmittance of the diffractiongrating 804 can be controlled in the range of from 10% to 70%. The lighttransmittance of the diffraction grating 804 can be controlled byadjusting the interval and pitch of slits, dots, or meshes of thediffraction grating.

As illustrated in FIG. 13C, the half-tone mask 801 b includes thelight-transmitting substrate 802, and a semi-light-transmitting portion807 and a light-blocking portion 806 which are formed on thelight-transmitting substrate 802. The semi-light-transmitting portion807 can be formed using MoSiN, MoSi, MoSiO, MoSiON, CrSi, or the like.The light-blocking portion 806 can be formed using a light-blockingmaterial which absorbs light, such as chromium or chromium oxide.

When the gray-tone mask 801 b is irradiated with light for exposure, alight transmittance 808 of the light-blocking portion 806 is 0% and thelight transmittance 808 of a region where neither the light-blockingportion 806 nor the semi-light-transmitting portion 807 is provided is100%, as illustrated in FIG. 13D. The light transmittance of thesemi-light-transmitting portion 807 can be controlled in the range offrom 10% to 70%. The light transmittance of the semi-light-transmittingportion 807 can be controlled with the material of thesemi-light-transmitting portion 807.

The resist mask 235 formed using a multi-tone mask is a resist maskincluding a plurality of regions (here, two regions) having differentthicknesses; a region having a large thickness and a region having asmall thickness. A region of the resist mask 235, which has a largethickness, is referred to as a projecting portion of the resist mask235. A region of the resist mask 235, which has a small thickness, isreferred to as a depressed portion of the resist mask 235.

The conductive layer 231, the insulating layer 232, the semiconductorlayer 233, and the insulating layer 234 are selectively etched using theresist mask 235 as a mask to form the gate electrode 202, the wiring203, the wiring 212, the island-like insulating layer 204, theisland-like semiconductor layer 205, and the island-like insulatinglayer 214 (see FIG. 7A).

For the etching of the conductive layer 231, the insulating layer 232,the semiconductor layer 233, and the insulating layer 234, either dryetching or wet etching or both of them may be used. For example, a gascontaining chlorine (a chlorine-based gas such as chlorine (Cl₂), borontrichloride (BCl₃), silicon tetrachloride (SiCl₄), or carbontetrachloride (CCl₄)) can be employed as an etching gas used for the dryetching.

As the dry etching, a parallel-plate reactive ion etching (RIE) methodor an inductively coupled plasma (ICP) etching method can be used. Sincethe insulating layer 201 has a function of preventing diffusion ofimpurity elements from the substrate 200, for the above etching, etchingconditions are preferably adjusted so as to etch the insulating layer201 as little as possible. Note that the insulating layer 201 ispreferably formed using a material which is hardly etched during theabove etching.

Next, the resist mask 235 is downsized by oxygen plasma ashing or thelike. At this time, a region having a small thickness in the resist mask235 is removed, and the island-like insulating layer 214 is exposed (seeFIG. 7B).

Next, part of the gate electrode 202, part of the wiring 203, and partof the wiring 212 are exposed by selective removal of the island-likeinsulating layer 204, the island-like semiconductor layer 205, and theisland-like insulating layer 214, using the remaining resist mask 235 asa mask. At this time, the side surfaces of the island-like insulatinglayer 204, the island-like semiconductor layer 205, and the island-likeinsulating layer 214 on each side are substantially aligned with oneanother, and each layer has a substantially similar shape when seen fromthe above.

Further, the end portions of the gate electrode 202 are projectedoutside the end portions of the island-like insulating layer 204, theisland-like semiconductor layer 205, and the island-like insulatinglayer 214, whereby a step is suppressed and coverage with an insulatinglayer or a conductive layer which will be formed later can be improved(see FIG. 8A).

Deterioration in characteristics of the transistor due to lightirradiation from the gate electrode 202 side can be prevented byproviding the island-like semiconductor layer 205 so as to overlap withthe gate electrode 202 and providing the island-like semiconductor layer205 to be smaller than the gate electrode 202.

Note that although not illustrated, in order to reduce parasiticcapacitance in an intersection of the wiring 216 which will be formedlater and the wiring 203 and an intersection of the wiring 216 and thewiring 212, the island-like insulating layer 204, the island-likesemiconductor layer 205, and the island-like insulating layer 214 areleft over the portions of the wiring 203 and the wiring 212, whichcorrespond to the intersections.

Then, the resist mask 235 is removed. By using the multi-tone mask, aplurality of photolithography steps can be replaced with onephotolithography step. Accordingly, the productivity of a semiconductordevice can be improved.

Note that unless otherwise specified, a photolithography step in thisspecification includes a step of forming a resist mask, a step ofetching a conductive layer or an insulating layer, and a step ofseparating the resist mask.

Next, the insulating layer 215 is formed over the island-like insulatinglayer 214, the wiring 203, and the wiring 212. The insulating layer 215can be formed using a material and a method similar to those of theinsulating layer 201, the insulating layer 232 (the island-likeinsulating layer 204), and the insulating layer 234 (the island-likeinsulating layer 214). Further, since the insulating layer 215 functionsas a dielectric layer of the capacitor 113, a material having a highrelative permittivity is preferably used. In this embodiment, a200-nm-thick silicon nitride layer is formed as the insulating layer 215by a sputtering method. A silicon nitride layer is preferable becausethe relative permittivity is higher than that of a silicon oxide layerand it can function as a protective layer for preventing entry of animpurity from the outside (see FIG. 8B).

Next, the contact holes 208 and the contact hole 219 are formed byselective removal of the insulating layer 215 and the insulating layer214 through a second photolithography step using a second photomask.Part of the semiconductor layer 205 is exposed in the contact holes 208and part of the wiring 212 is exposed in the contact hole 219 (see FIG.9A). Further, the areas of the contact holes are preferably made largeas much as possible or the number of contact holes is preferably madelarge in order to reduce the contact resistance.

Then, a conductive layer is formed over the insulating layer 215, andthe source electrode 206 a, the drain electrode 206 b, the electrode221, and the wiring 216 are formed through a third photolithography stepusing a third photomask (see FIG. 9B). The conductive layer for formingthe source electrode 206 a, the drain electrode 206 b, the electrode221, and the wiring 216 can be formed using a material and a methodsimilar to those of the conductive layer 231. In this embodiment, as theconductive layer, by a sputtering method, a 5-nm-thick titanium nitridelayer is formed over the insulating layer 215 and a 250-nm-thick Culayer is formed over the titanium nitride layer.

Next, a light-transmitting conductive layer is formed over the sourceelectrode 206 a, the drain electrode 206 b, the electrode 221, and thewiring 216; and the pixel electrode 210, the electrode 222, and theelectrode 223 are formed through a fourth photolithography step using afourth photomask (see FIG. 9C).

For the light-transmitting conductive layer, a light-transmittingconductive material such as indium oxide containing tungsten oxide,indium zinc oxide containing tungsten oxide, indium oxide containingtitanium oxide, indium tin oxide containing titanium oxide, indium tinoxide (hereinafter referred to as ITO), indium zinc oxide, or indium tinoxide to which silicon oxide is added can be used.

Furthermore, in order to prevent oxidation of the source electrode 206a, the drain electrode 206 b, the wiring 216, and the like, part of orentire of these electrodes or the wiring can be covered with theconductive layer for forming the pixel electrode 210.

In this embodiment, an example of a method for manufacturing a pixelportion of a transmissive display device is described. However, withoutlimitation thereto, one embodiment of the present invention can beapplied to a pixel portion of a reflective display device as well. Inthe case where a pixel portion of a reflective display device isobtained, the pixel electrode may be formed using a conductive layerwith high light reflectance (also referred to as a reflective conductivelayer); for example, a metal having high visible-light reflectance, suchas aluminum, titanium, silver, rhodium, or nickel; an alloy containingat least one of the above metals; or stacked layers of the abovematerials may be used.

As needed, the same material as the pixel electrode can be placed so asto overlap with the channel formation region of the semiconductor layer.

In this embodiment, a 80-nm-thick ITO layer is formed as thelight-transmitting conductive layer. The ITO layer can be etched usingan etchant ITO-07N for etching a transparent conductive film, which isproduced by KANTO CHEMICAL CO., INC.

In addition, in the terminal portion 103 and the terminal portion 104,it is important that the wiring 212 and the wiring 216 be not kept in anexposed state and be covered with an oxide conductive material such asITO. When the wiring 212 and the wiring 216 which are metal layers arekept in an exposed state, exposed surfaces are oxidized and contactresistance with an FPC or the like is increased. The increase in contactresistance causes distortion in waveform or delay of a signal that isinput from the outside; therefore, a signal from the outside cannot betransmitted correctly, so that the reliability of the semiconductordevice is lowered. By covering the exposed surfaces of the wiring 212and the wiring 216 with an oxide conductive material such as ITO, theincrease in contact resistance with an FPC or the like can be prevented,and the reliability of the semiconductor device can be improved.

In accordance with the above manufacturing method, the pixel 110including the transistor 111 and the capacitor 113, the terminal 105,and the terminal 106 can be formed. In addition, the pixel 120 and thepixel 130 can be formed using a manufacturing method which is similar tothat of the pixel 110.

Further, in the semiconductor layer 205, the top surface and sidesurfaces are covered with the insulating layer 215 and the bottomsurface is covered with the gate electrode 202 which is a metal layer;therefore, entry of an impurity from the outside hardly occurs, and ahighly reliable semiconductor device can be obtained. Additionally, whenthe insulating layer 215 and the insulating layer 201 are formed usingsilicon nitride films and the semiconductor layer 205 is covered withthe silicon nitride film, the reliability of the semiconductor devicecan be further improved.

According to this embodiment, a semiconductor device can be manufacturedwith a smaller number of photomasks and a smaller number ofphotolithography steps than the conventional ones. Therefore, a displaydevice can be manufactured at low cost with high productivity.

This embodiment can be implemented in appropriate combination with theother embodiments.

Embodiment 2

In this embodiment, an example of a process which is partly differentfrom that described in Embodiment 1 will be described with reference toFIGS. 10A to 10C. Note that in FIGS. 10A to 10C, the same referencenumerals are used for the same parts as those in Embodiment 1, anddescription of the parts with the same reference numerals will beomitted here.

First, as in Embodiment 1, the insulating layer 201 is formed over thesubstrate 200, and the conductive layer 231 is formed over theinsulating layer 201. In this embodiment, a three-layer structureincluding Cu between two layers of Mo is employed for the conductivelayer 231 because the film formation temperature of a semiconductorlayer to be formed later is higher than or equal to 200° C. and lowerthan or equal to 450° C. and the temperature of heat treatment after theformation of the semiconductor layer is higher than or equal to 200° C.and lower than or equal to 450° C.

Then, the insulating layer 232 is provided over the conductive layer231, and a first oxide semiconductor layer is formed to a thickness ofgreater than or equal to 1 nm and less than or equal to 10 nm over theinsulating layer 232. In this embodiment, the first oxide semiconductorlayer is formed to a thickness of 5 nm by using a sputtering gas ofoxygen, argon, or a mixture of argon and oxygen under such conditionsthat a target for an oxide semiconductor (a target for an In—Ga—Zn-basedoxide semiconductor containing In₂O₃, Ga₂O₃, and ZnO at 1:1:2 [molarratio]) is used, the distance between the substrate and the target is170 mm, the substrate temperature is 250° C., the pressure is 0.4 Pa,and the direct current (DC) power is 0.5 kW.

Next, first heat treatment is performed by setting an atmosphere wherethe substrate is placed to a nitrogen atmosphere or dry air. Thetemperature of the first heat treatment is higher than or equal to 200°C. and lower than or equal to 450° C. In addition, heating time of thefirst heat treatment is longer than or equal to 1 hour and shorter thanor equal to 24 hours. By the first heat treatment, the first oxidesemiconductor layer is crystallized and a first crystalline oxidesemiconductor layer 148 a is formed (see FIG. 10B).

Next, a second oxide semiconductor layer with a thickness of greaterthan 10 nm is formed over the first crystalline oxide semiconductorlayer 148 a. In this embodiment, the second oxide semiconductor layer isformed to a thickness of 25 nm by using a sputtering gas of oxygen,argon, or a mixture of argon and oxygen under such conditions that atarget for an oxide semiconductor (a target for an In—Ga—Zn-based oxidesemiconductor containing In₂O₃, Ga₂O₃, and ZnO at 1:1:2 [molar ratio])is used; the distance between the substrate and the target is 170 mm;the substrate temperature is 400° C.; the pressure is 0.4 Pa; and thedirect current (DC) power is 0.5 kW.

Then, second heat treatment is performed by setting an atmosphere wherethe substrate is placed to a nitrogen atmosphere or dry air. Thetemperature of the second heat treatment is higher than or equal to 200°C. and lower than or equal to 450° C. In addition, heating time of thesecond heat treatment is longer than or equal to 1 hour and shorter thanor equal to 24 hours. By the second heat treatment, the second oxidesemiconductor layer is crystallized and a second crystalline oxidesemiconductor layer 148 b is formed (see FIG. 10C).

Next, the insulating layer 234 is formed over the second crystallineoxide semiconductor layer 148 b. In the following process, in accordancewith Embodiment 1, the transistor 111 can be obtained. Note that in thecase where this embodiment is employed, the stack of the firstcrystalline oxide semiconductor layer 148 a and the second crystallineoxide semiconductor layer 148 b form a semiconductor layer including achannel formation region of the transistor 111. The first crystallineoxide semiconductor layer 148 a and the second crystalline oxidesemiconductor layer 148 b have c-axis alignment.

In the case of the transistor including stacked layers of the firstcrystalline oxide semiconductor layer and the second crystalline oxidesemiconductor layer, the amount of change in threshold voltage of thetransistor between before and after being irradiated with light or beingsubjected to a bias-temperature (BT) stress test can be reduced; thus,such a transistor has stable electric characteristics.

This embodiment can be freely combined with any of the otherembodiments.

Embodiment 3

One mode of a display device in which any of the transistors describedin Embodiment 1 and Embodiment 2 is used is illustrated in FIGS. 11A and11B.

FIG. 11A is a plan view of a panel in which a transistor 4010 and aliquid crystal element 4013 are sealed between a first substrate 4001and a second substrate 4006 with a sealant 4005. FIG. 11B is across-sectional view taken along line M-N in FIG. 11A.

The sealant 4005 is provided so as to surround a pixel portion 4002provided over the first substrate 4001. The second substrate 4006 isprovided over the pixel portion 4002. Accordingly, the pixel portion4002 is sealed together with a liquid crystal layer 4008 by the firstsubstrate 4001, the sealant 4005, and the second substrate 4006.

Further, an input terminal 4020 is provided in a region over the firstsubstrate 4001 outside a region surrounded by the sealant 4005, andflexible printed circuits (FPCs) 4018 a and 4018 b are connected to theinput terminal 4020. The FPC 4018 a is electrically connected to asignal line driver circuit 4003 which is separately provided overanother substrate, and the FPC 4018 b is electrically connected to ascan line driver circuit 4004 which is separately provided over anothersubstrate. Various signals and potentials supplied to the pixel portion4002 are supplied from the signal line driver circuit 4003 and the scanline driver circuit 4004 via the FPC 4018 a and the FPC 4018 b.

Note that a connection method of separately formed driver circuits isnot particularly limited, and a chip on glass (COG) method, a wirebonding method, a tape carrier package (TCP) method, a tape automatedbonding (TAB) method, or the like can be used.

Although not illustrated, the signal line driver circuit 4003 or thescan line driver circuit 4004 may be provided over the substrate 4001with the use of the transistor disclosed in this specification.

As a display element provided in the display device, a liquid crystalelement (also referred to as a liquid crystal display element) can beused. Furthermore, a display medium whose contrast is changed by anelectric effect, such as electronic ink, can be used.

The display device illustrated in FIGS. 11A and 11B includes anelectrode 4015 and a wiring 4016. The electrode 4015 and the wiring 4016are electrically connected to a terminal included in the FPC 4018 a viaan anisotropic conductive layer 4019.

The electrode 4015 is formed using the same conductive layer as a firstelectrode 4030, and the wiring 4016 is formed using the same conductivelayer as a source electrode and a drain electrode of the transistor4010.

In this embodiment, any of the transistors described in Embodiment 1 andEmbodiment 2 can be applied to the transistor 4010. The transistor 4010provided in the pixel portion 4002 is electrically connected to adisplay element to form a display panel. A variety of display elementscan be used for the display element as long as display can be performed.

FIGS. 11A and 11B illustrate an example of a display device in which aliquid crystal element is used as a display element. In FIGS. 11A and11B, the liquid crystal element 4013 which is a display element includesthe first electrode 4030, a second electrode 4031, and the liquidcrystal layer 4008. Note that an insulating layer 4032 and an insulatinglayer 4033 each functioning as alignment films are provided so that theliquid crystal layer 4008 is provided therebetween. The second electrode4031 is formed on the second substrate 4006 side. The first electrode4030 and the second electrode 4031 are stacked with the liquid crystallayer 4008 provided therebetween.

A spacer 4035 is a columnar spacer which is formed on the secondsubstrate 4006 using an insulating layer and is provided to control thethickness of the liquid crystal layer 4008 (a cell gap). Alternatively,a spherical spacer may be used.

In the case where a liquid crystal element is used as the displayelement, a liquid crystal material such as a thermotropic liquidcrystal, a low-molecular liquid crystal, a high-molecular liquidcrystal, a polymer dispersed liquid crystal, a ferroelectric liquidcrystal, or an anti-ferroelectric liquid crystal can be used for theliquid crystal layer 4008. These liquid crystal materials exhibit acholesteric phase, a smectic phase, a cubic phase, a chiral nematicphase, an isotropic phase, or the like depending on conditions.

Alternatively, a liquid crystal material exhibiting a blue phase forwhich an alignment film is unnecessary may be used. A blue phase is oneof liquid crystal phases, which is generated just before a cholestericphase changes into an isotropic phase while temperature of cholestericliquid crystal is increased. Since the blue phase appears only in anarrow temperature range, a liquid crystal composition in which 5 wt. %or more of a chiral material is mixed is used for the liquid crystallayer in order to improve the temperature range. The liquid crystalcomposition which includes a liquid crystal material exhibiting a bluephase and a chiral agent has a short response time of 1 msec or less,and has optical isotropy, which makes the alignment process unneeded andviewing angle dependence small. In addition, since an alignment filmdoes not need to be provided and rubbing treatment is unnecessary,electrostatic discharge damage caused by the rubbing treatment can beprevented and defects and damage of the liquid crystal display devicecan be reduced in the manufacturing process. Thus, the productivity ofthe liquid crystal display device can be increased.

The specific resistivity of the liquid crystal material is higher thanor equal to 1×10⁹ Ω·cm, preferably higher than or equal to 1×10¹¹ Ω·cm,further preferably higher than or equal to 1×10¹² Ω·cm. The value of thespecific resistivity in this specification is measured at 20° C.

The capacitance of a capacitor 4011 (a storage capacitor) formed in eachpixel of the liquid crystal display device is set considering theleakage current of the transistor 4010 provided in each pixel, or thelike so that electric charge can be held for a predetermined period. Byusing the transistor 4010 in which an i-type or substantially i-typeoxide semiconductor is used for a semiconductor layer where a channel isformed, it is enough to provide a storage capacitor having capacitancethat is less than or equal to ⅓, preferably less than or equal to ⅕ ofliquid crystal capacitance of each pixel.

In the transistor including an i-type or substantially i-type oxidesemiconductor layer, the current in an off state (the off-state current)can be made small. Accordingly, an electrical signal such as an imagesignal can be held for a longer period, and a writing interval can beset longer in an on state. Accordingly, frequency of refresh operationcan be reduced, which leads to an effect of suppressing powerconsumption. Further, in the transistor including an i-type orsubstantially i-type oxide semiconductor layer, a potential applied tothe liquid crystal element can be held even when a storage capacitor isnot provided.

The field-effect mobility of the transistor including the oxidesemiconductor layer can be relatively high, whereby high-speed operationis possible. Therefore, by using the transistor in a pixel portion of aliquid crystal display device, a high-quality image can be provided. Inaddition, since the transistors can be separately provided in a drivercircuit portion and a pixel portion over one substrate, the number ofcomponents of the liquid crystal display device can be reduced.

For the liquid crystal display device, a liquid crystal element of atwisted nematic (TN) mode, an in-plane-switching (IPS) mode, a fringefield switching (FFS) mode, an axially symmetric aligned micro-cell(ASM) mode, an optical compensated birefringence (OCB) mode, aferroelectric liquid crystal (FLC) mode, an antiferroelectric liquidcrystal (AFLC) mode, or the like can be used.

Further, a normally black liquid crystal display device such as atransmissive liquid crystal display device utilizing a verticalalignment (VA) mode may also be used. Here, the vertical alignment modeis a method of controlling alignment of liquid crystal molecules of aliquid crystal display panel, in which liquid crystal molecules arealigned vertically to a panel surface when no voltage is applied. Someexamples are given as the vertical alignment mode. For example, amulti-domain vertical alignment (MVA) mode, a patterned verticalalignment (PVA) mode, an advanced super-view (ASV) mode, and the likecan be used. Moreover, it is possible to use a method called domainmultiplication or multi-domain design, in which a pixel is divided intosome regions (subpixels) and molecules are aligned in differentdirections in their respective regions.

In the liquid crystal display device, a black matrix (a light-blockinglayer); an optical member (an optical substrate) such as a polarizingmember, a retardation member, or an anti-reflection member; and the likeare provided as appropriate. For example, circular polarization may beobtained by using a polarizing substrate and a retardation substrate. Inaddition, a backlight, a side light, or the like may be used as a lightsource.

In addition, it is possible to employ a time-division display method(also called a field-sequential driving method) with the use of aplurality of light-emitting diodes (LEDs) as a backlight. By employing afield-sequential driving method, color display can be performed withoutusing a color filter.

As a display method in the pixel portion, a progressive method, aninterlace method or the like can be employed. Further, color elementscontrolled in a pixel at the time of color display are not limited tothree colors: R, G, and B (R, G, and B correspond to red, green, andblue, respectively). For example, R, G, B, and W (W corresponds towhite); or R, G, B, and one or more of yellow, cyan, magenta, and thelike can be used. Further, the sizes of display regions may be differentbetween respective dots of color elements. However, one embodiment ofthe present invention is not limited to a liquid crystal display devicefor color display and can be applied to a liquid crystal display devicefor monochrome display.

In FIGS. 11A and 11B, a flexible substrate as well as a glass substratecan be used as any of the first substrate 4001 and the second substrate4006. For example, a light-transmitting plastic substrate or the likecan be used. As plastic, a fiberglass-reinforced plastics (FRP) plate, apolyvinyl fluoride (PVF) film, a polyester film, or an acrylic resinfilm can be used. In addition, a sheet with a structure in which analuminum foil is sandwiched between PVF films or polyester films can beused.

The first electrode and the second electrode (each of which may becalled a pixel electrode, a common electrode, an opposite electrode, orthe like) for applying voltage to the display element may havelight-transmitting properties or light-reflecting properties, whichdepends on the direction in which light is extracted, the position wherethe electrode is provided, and the pattern structure of the electrode.

Any of the first electrode 4030 and the second electrode 4031 can beformed using a light-transmitting conductive material such as indiumoxide containing tungsten oxide, indium zinc oxide containing tungstenoxide, indium oxide containing titanium oxide, indium tin oxidecontaining titanium oxide, indium tin oxide, indium zinc oxide, orindium tin oxide to which silicon oxide is added.

One of the first electrode 4030 and the second electrode 4031 can beformed using one or plural kinds of materials selected from metals suchas tungsten (W), molybdenum (Mo), zirconium (Zr), hafnium (Hf), vanadium(V), niobium (Nb), tantalum (Ta), chromium (Cr), cobalt (Co), nickel(Ni), titanium (Ti), platinum (Pt), aluminum (Al), copper (Cu), andsilver (Ag); alloys of these metals; and nitrides of these metals.

A conductive composition including a conductive high molecule (alsoreferred to as a conductive polymer) can be used for the first electrode4030 and the second electrode 4031. As the conductive high molecule, aso-called π-electron conjugated conductive high molecule can be used.For example, polyaniline or a derivative thereof, polypyrrole or aderivative thereof, polythiophene or a derivative thereof, and acopolymer of two or more of aniline, pyrrole, and thiophene or aderivative thereof can be given.

Further, since a transistor is easily broken by static electricity orthe like, a protection circuit is preferably provided. The protectioncircuit is preferably formed using a non-linear element.

This embodiment can be freely combined with any of the otherembodiments.

Embodiment 4

In this embodiment, examples of electronic appliances each including thedisplay device described in the above embodiment will be described.

FIG. 12A illustrates a laptop personal computer, which includes a mainbody 3001, a housing 3002, a display portion 3003, a keyboard 3004, andthe like. By using the display device described in the above embodiment,a highly reliable laptop personal computer can be obtained.

FIG. 12B is a personal digital assistant (PDA), which includes a mainbody 3021 provided with a display portion 3023, an external interface3025, operation buttons 3024, and the like. A stylus 3022 is included asan accessory for operation. By using the display device described in theabove embodiment, a highly reliable personal digital assistant (PDA) canbe obtained.

FIG. 12C illustrates an example of an e-book reader. For example, thee-book reader includes two housings, a housing 2702 and a housing 2704.The housing 2702 is combined with the housing 2704 by a hinge 2712, sothat the e-book reader can be opened and closed using the hinge 2712 asan axis. With such a structure, the e-book reader can operate like apaper book.

A display portion 2705 and a display portion 2707 are incorporated inthe housing 2702 and the housing 2704, respectively. The display portion2705 and the display portion 2707 may display a continuous image ordifferent images. In the structure where different images are displayedon different display portions; for example, the right display portion(the display portion 2705 in FIG. 12C) displays text and the leftdisplay portion (the display portion 2707 in FIG. 12C) displays images.By using the display device described in the above embodiment, a highlyreliable e-book reader can be obtained.

FIG. 12C illustrates an example in which the housing 2702 is providedwith an operation portion and the like. For example, the housing 2702 isprovided with a power supply terminal 2721, operation keys 2723, aspeaker 2725, and the like. With the operation keys 2723, pages can beturned. Note that a keyboard, a pointing device, or the like may also beprovided on the surface of the housing, on which the display portion isprovided. Furthermore, an external connection terminal (an earphoneterminal, a USB terminal, or the like), a recording medium insertionportion, and the like may be provided on the back surface or the sidesurface of the housing. Further, the e-book reader may have a functionof an electronic dictionary.

The e-book reader may transmit and receive data wirelessly. Throughwireless communication, desired book data or the like can be purchasedand downloaded from an e-book server.

FIG. 12D illustrates a mobile phone, which includes two housings, ahousing 2800 and a housing 2801. The housing 2801 includes a displaypanel 2802, a speaker 2803, a microphone 2804, a pointing device 2806, acamera lens 2807, an external connection terminal 2808, and the like. Inaddition, the housing 2800 includes a solar cell 2810 having a functionof charge of the mobile phone, an external memory slot 2811, and thelike. Further, an antenna is incorporated in the housing 2801.

The display panel 2802 is provided with a touch screen. A plurality ofoperation keys 2805 which is displayed as images is illustrated bydashed lines in FIG. 12D. Note that a boosting circuit by which avoltage output from the solar cell 2810 is increased to be sufficientlyhigh for each circuit is also included.

In the display panel 2802, the display direction can be changed asappropriate depending on a usage pattern. Further, the mobile phone isprovided with the camera lens 2807 on the same surface as the displaypanel 2802, and thus it can be used as a video phone. The speaker 2803and the microphone 2804 can be used for videophone calls, recording andplaying sound, and the like as well as voice calls. Moreover, thehousings 2800 and 2801 in a state where they are developed asillustrated in FIG. 12D can shift by sliding so that one is lapped overthe other; therefore, the size of the mobile phone can be reduced, whichmakes the mobile phone suitable for being carried.

The external connection terminal 2808 can be connected to an AC adapterand various types of cables such as a USB cable, and charging and datacommunication with a personal computer are possible. Moreover, a largeamount of data can be stored by inserting a storage medium into theexternal memory slot 2811 and can be moved.

Further, in addition to the above functions, an infrared communicationfunction, a television reception function, or the like may be provided.By using the display device described in the above embodiment, a highlyreliable mobile phone can be obtained.

FIG. 12E illustrates a digital video camera, which includes a main body3051, a display portion A 3057, an eyepiece 3053, an operation switch3054, a display portion B 3055, a battery 3056, and the like. By usingthe display device described in the above embodiment, a highly reliabledigital video camera can be obtained.

FIG. 12F illustrates an example of a television set. In the televisionset, a display portion 9603 is incorporated in a housing 9601. Thedisplay portion 9603 can display images. Here, the housing 9601 issupported by a stand 9605. By using the display device described in theabove embodiment, a highly reliable television set can be obtained.

The television set can operate by an operation switch of the housing9601 or a separate remote controller. Further, the remote controller maybe provided with a display portion for displaying data output from theremote controller.

Note that the television set is provided with a receiver, a modem, andthe like. With the use of the receiver, general television broadcastingcan be received. Moreover, when the television set is connected to acommunication network with or without wires via the modem, one-way (froma sender to a receiver) or two-way (between a sender and a receiver orbetween receivers) information communication can be performed.

This embodiment can be implemented in appropriate combination with anyof the structures described in the other embodiments.

This application is based on Japanese Patent Application Serial No.2010-275919 filed with Japan Patent Office on Dec. 10, 2010, the entirecontents of which are hereby incorporated by reference.

What is claimed is:
 1. A method for manufacturing a display devicecomprising the steps of: forming a conductive layer, a first insulatinglayer, a semiconductor layer, and a second insulating layer; forming agate electrode and an island-like semiconductor layer by selectiveremoval of the conductive layer, the first insulating layer, thesemiconductor layer, and the second insulating layer through a firstphotolithography step; exposing a portion of the island-likesemiconductor layer by selective removal of a portion of the secondinsulating layer through a second photolithography step; forming asource electrode and a drain electrode through a third photolithographystep; and forming a pixel electrode through a fourth photolithographystep.
 2. The method for manufacturing the display device, according toclaim 1, wherein the conductive layer, the first insulating layer, thesemiconductor layer, and the second insulating layer are formed withoutexposure to the air.
 3. The method for manufacturing the display device,according to claim 1, wherein an oxide semiconductor is used for thesemiconductor layer.
 4. The method for manufacturing the display device,according to claim 1, wherein the gate electrode, the source electrode,or the drain electrode comprises a material containing copper.
 5. Themethod for manufacturing the display device, according to claim 1,wherein a maximum process temperature after the gate electrode, thesource electrode, or the drain electrode is formed is lower than orequal to 450° C.
 6. A method for manufacturing a display devicecomprising the steps of: forming a conductive layer, a first insulatinglayer, a semiconductor layer, and a second insulating layer; forming agate electrode, a capacitor wiring, and an island-like semiconductorlayer by selective removal of the conductive layer, the first insulatinglayer, the semiconductor layer, and the second insulating layer througha first photolithography step; forming a third insulating layer coveringthe gate electrode, the capacitor wiring, and the island-likesemiconductor layer; exposing a portion of the island-like semiconductorlayer by selective removal of a portion of the second insulating layerand the third insulating layer through a second photolithography step;forming a source electrode and a drain electrode through a thirdphotolithography step; and forming a pixel electrode through a fourthphotolithography step, wherein a portion of the drain electrode overlapswith the third insulating layer and the capacitor wiring.
 7. The methodfor manufacturing the display device, according to claim 6, wherein theconductive layer, the first insulating layer, the semiconductor layer,and the second insulating layer are formed without exposure to the air.8. The method for manufacturing the display device, according to claim6, wherein an oxide semiconductor is used for the semiconductor layer.9. The method for manufacturing the display device, according to claim6, wherein the gate electrode, the source electrode, or the drainelectrode comprises a material containing copper.
 10. The method formanufacturing the display device, according to claim 6, wherein amaximum process temperature after the gate electrode, the sourceelectrode, or the drain electrode is formed is lower than or equal to450° C.